KGF1323C ? electronic components 1/6 this version: jul. 1998 previous version: jan. 1998 ? electronic components KGF1323C power fet (plastic package type) general description the KGF1323C, housed in a sot-89 type plastic-mold package, is a kgf1323 based discrete gaas power fet that features high efficiency and high output power. the KGF1323C specifications are guaranteed to a fixed matching circuit for 5.8 v and 1.8 ghz; external impedance-matching circuits are also required. because of its high efficiency, high output power (more than 33 dbm), and plastic package, the KGF1323C is ideal as a transmitter-final-stage amplifier for high frequency personal handy sustems, such as dcs1800 and pcs. features ? specifications guaranteed to a fixed matching circuit for 5.8 v and 1.8 ghz ? high output power: 33 dbm (min.) ? high efficiency: 63% (typ.) ? low thermal resistance: 23 c/w (typ.) ? package: 3pmmp (sot-89 type) package dimensions e2q0031-38-72 1.5 0.1 0.39 0.05 (unit: mm) 4.5 0.1 4 0.2 2.5 0.1 1 0.2 +0.08 C0.05 0.4 +0.08 C0.05 0.4 +0.08 C0.05 0.48 1.5 0.1 1.5 0.1 3 0.1 package material pin treatment solder plate thickness lead frame material epoxy resin solder plating 5 m m or more cu 1.6 +0.15 C0.10
KGF1323C ? electronic components 2/6 circuit marking (1) (2) (3) product type lot number (numerical or alphabetical) p3 xx (1) gate (2) source (3) drain gate(1) drain(3) source(2)
KGF1323C ? electronic components 3/6 absolute maximum ratings electrical characteristics *1 condition: f = 1.8 ghz, v ds = 5.8 v, i dsq = 500 ma item v ds symbol condition max. unit drain-source voltage gate-source voltage total power dissipation channel temperature v gs p tot t ch ta = 25c 10 0.4 5 150 v v w c storage temperature t stg 125 c min. C6.0 C45 ta = tc = 25c ta = 25c drain current i ds ta = 25c 3.0 a item p o symbol condition max. unit output power dbm min. 33.0 57 (*1), p in = 26 dbm typ. 33.4 63 drain efficiency h d (*1), p in = 26 dbm % linear gain g lin db (ta = 25c) 9.5 (*1), p in = 10 dbm thermal resistance r th c/w 14 channel to case v gs(off) gate-source cut-off voltage C2.8 v C3.8 v ds = 3 v, i ds = 4.8 ma i dss drain current a 2.0 v ds = 1.5 v, v gs = 0 v i ds(off) drain-source leakage current 1500 m a v ds = 10 v, v gs = C6 v i gdo gate-drain leakage current 500 m a v gd = C16 v i gss gate-source leakage current 100 m a v gs = C6 v
KGF1323C ? electronic components 4/6 rf characteristics
KGF1323C ? electronic components 5/6 typical s parameters freq(mhz) 500.0 mag(s 11 ) ang(s 11 ) mag(s 21 ) ang(s 21 ) mag(s 12 ) ang(s 12 ) mag(s 22 ) ang(s 22 ) v ds = 5.8 v, i ds = 500 ma 600.0 700.0 800.0 900.0 1000.0 1100.0 1200.0 1300.0 1400.0 1500.0 1600.0 1700.0 1800.0 1900.0 2000.0 2100.0 2200.0 2300.0 2400.0 2500.0 2600.0 2700.0 2800.0 2900.0 3000.0 0.926 0.925 0.923 0.921 0.921 0.918 0.915 0.912 0.911 0.908 0.906 0.904 0.903 0.898 0.894 0.892 0.887 0.882 0.880 0.878 0.873 0.870 0.866 0.864 0.861 0.859 C159.74 C164.71 C168.51 C171.43 C174.01 C176.36 C178.36 179.65 177.70 176.12 174.39 172.80 171.07 169.70 167.99 166.35 164.85 163.26 161.66 160.03 158.50 157.01 155.40 154.11 152.44 151.11 4.135 3.460 2.978 2.630 2.339 2.113 1.931 1.777 1.650 1.532 1.437 1.347 1.264 1.209 1.142 1.088 1.043 0.996 0.959 0.922 0.883 0.862 0.823 0.796 0.767 0.750 89.07 85.00 80.91 74.43 71.08 68.29 64.91 62.09 59.52 56.33 53.66 50.37 49.13 43.29 40.77 37.71 35.39 32.66 30.18 28.21 25.06 23.17 20.65 18.19 0.030 0.031 0.032 0.033 0.033 0.034 0.035 0.036 0.037 0.038 0.039 0.040 0.041 0.042 0.043 0.044 0.045 0.046 0.047 0.048 0.050 0.051 0.052 0.053 0.054 0.055 18.92 18.94 18.87 18.16 18.79 18.27 18.39 18.12 19.03 18.35 18.66 18.22 18.24 17.78 18.09 17.33 16.73 16.77 16.65 16.08 16.13 15.27 13.61 13.77 12.14 12.45 0.665 0.664 0.664 0.668 0.665 0.667 0.662 0.664 0.660 0.662 0.659 0.664 0.654 0.663 0.655 0.659 0.656 0.657 0.653 0.654 0.653 0.654 0.651 0.651 0.653 0.648 C176.96 C178.23 C179.18 179.67 179.14 177.62 177.44 176.12 175.55 174.56 173.72 172.71 171.68 171.05 169.82 169.21 167.89 167.27 166.00 165.38 163.58 163.17 161.52 160.81 159.09 158.20 45.91 77.39
KGF1323C ? electronic components 6/6 typical s parameters v ds = 5.8 v, i ds = 500 ma frequency : 0.5 to 3.0 ghz z 0 = 50 w j2.0 j1.0 j0.5 j0.2 135 j5.0 90 45 180 0 0.0 0.2 0.5 1.0 2.0 5.0 5.0 4.0 3.0 2.0 1.0 0.02 0.04 0.06 0.08 0.10 0.5 3.0 s21 s12 3.0 0.5 s22 s11 0.5 3.0 0.5 3.0
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